Every computer system, storage unit, and mobile device in existence today all have one thing in common: the need for memory. From performance to scalability to security, strong and reliable memory is essential to the success of any unit of technology today. Until now, the memory market has been dominated by existing technologies including charge-based, volatile memories (DRAM and SRAM) and non-volatile memories (NOR and NAND flash). These technologies have successfully existed for 30 years, but are they best suited for the changing needs of future IT infrastructure, which come with increasing demands for more speed, reliability, and lower costs? Avalanche Technology, a leader in disruptive technology, has a better solution.
The first in the industry to do so, Avalanche Technology has successfully developed a new form of memory technology called Spin Transfer Torque Magnetic Ram (STT-MRAM). This is an exciting leap into the future of memory solutions. Avalanche’s STT-MRAM is a high-speed non-volatile magnetic memory based on proprietary perpendicular magnetic tunnel junction (pMTJ) cells manufactured on high volume, low cost, standard CMOS 300mm process. As such, Avalanche’s STT-MRAM is a well suited and commercially viable memory replacement for many embedded and/or stand-alone DRAM and SRAM applications, including data storage, mobile, wearable devices, and networking equipment. STT-MRAM combines the best features of today’s dominant memory technologies with the added benefits of scalability beyond 10nm node, unlimited endurance, and the low power and low cost of flash memory.
Avalanche’s new technology has huge market opportunities, particularly as a storage technology, due to its speed and endurance. Moving from volatile memories such as SRAM and DRAM to a non-volatile memory architecture like STT-MRAM will improve memory systems across a wide range of industries and applications. Since it is non-volatile, STT-MRAM will retain its data when power is lost or is turned off—a huge bonus for large scale storage systems.
In an interview with EETimes, former VP of business development Michael Ofstedahl said that Avalanche had remained quiet about its technology until it had been developed into a commercially viable solution. The recent success of Avalanche’s STT-MRAM chip testing proves that it’s just a matter of time before we see systems implementing this new superior non-volatile memory technology. As this new memory is based on pMTJ cells manufactured on a high volume, low cost, standard CMOS 300mm process, it’s a better solution for high-volume, cost-sensitive applications than the industry’s current magnetic memory solutions. For a more in-depth explanation of the components of Avalanche’s STT-MRAM, check out the full EETimes article here.
Research firm Coughlin Associates sees enormous potential in Avalanche’s new technology. According to their recent report, a huge boom in STT-MRAM is predicted through 2019. By storing data without requiring power to be maintained to the circuits, the annual MRAM and STT-MRAM revenues will skyrocket from about $190 million in 2013 to $2.1 billion by 2019. The report also predicts the demand for standalone MRAM components and embedded MRAM will drive a market for MRAM manufacturing equipment to upwards of $245 million by 2019. While this is only the beginning for Avalanche Technology’s STT-MRAM, it’s an exciting time for the memory industry and an opportunity for limitless innovation for technology across the board, from mobile to data storage and beyond.
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